IKW50N65ES5XKSA1 IGBT tranzistò endistri 14
♠ Deskripsyon pwodwi
| Atribi pwodwi | Valè atribi |
| Manifakti: | Infineon |
| Kategori pwodwi: | IGBT tranzistò |
| Teknoloji: | Si |
| Pake / Ka: | TO-247-3 |
| Style monte: | Atravè twou |
| Konfigirasyon: | Selibatè |
| Pèseptè-Emetè Voltage VCEO Max: | 650 V |
| Voltaj saturation pèseptè-emetè: | 1.35 V |
| Maksimòm Gate Emeter Voltage: | 20 V |
| Kouran pèseptè kontinyèl nan 25 C: | 80 A |
| Pd - Dissipasyon pouvwa: | 274 W |
| Tanperati Minimòm Fonksyònman: | - 40 C |
| Maksimòm Tanperati Fonksyònman: | + 175 C |
| Seri: | TRENCHSTOP 5 S5 |
| Anbalaj: | Tib |
| Mak: | Infineon teknoloji |
| Kouran flit pòtay-emetè: | 100 nA |
| Wotè: | 20.7 mm |
| Longè: | 15.87 mm |
| Kalite pwodwi: | IGBT tranzistò |
| Kantite pake faktori: | 240 |
| Sou-kategori: | IGBT yo |
| Non komès: | TRENCHSTOP |
| Lajè: | 5.31 mm |
| Pati # Alias: | IKW50N65ES5 SP001319682 |
| Pwa inite: | 0.213537 oz |
HighspeedS5technologyoffering
•Highspeedsmoothswitchingdeviceforhard&softswitching
•VeryLowVCEsat,1.35Vatnominalcurrent
•Plugandplayreplacementofpreviousgeneration IGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTkopackedwithfullratedRAPID1fastantiparalleldiode
•Maximumjunctiontemperature175°C
•Kalifye daprè aplikasyon JEDEC pou sib
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Resonantkonvètè
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
